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AMAT 0010-43642 Advanced Gas Distribution Manifold
Product Description: A precision-engineered gas distribution component designed for accurate and uniform delivery of process gases to semiconductor wafers during thin-film deposition and etching processes.
Technical Specifications:
- Material: High-purity 316L electropolished stainless steel
- Number of Gas Channels: 6 independent gas delivery channels
- Flow Control: Integrated precision flow restrictors for uniform distribution
Detailed content
- Pressure Rating: Vacuum to 100psig operating pressure range
- Connection Type: VCR-style face seal fittings for leak-tight connections
- Surface Finish: Electropolished to Ra < 0.5μm for minimal particle entrapment
- Dimensions: Customizable based on specific chamber requirements
Functional Features:
- Independent flow control for each gas channel
- Minimizes gas mixing before reaching the process chamber
- Uniform gas distribution across the entire wafer surface
- Easy cleaning and maintenance with dismountable design
- Compatibility with all standard semiconductor process gases
- Zero dead volume design to minimize gas waste and cross-contamination
Application Scenarios:
- Multi-gas delivery for atomic layer deposition (ALD) processes
- Precise gas mixing for chemical vapor deposition (CVD) applications
- Controlled etchant gas delivery for advanced etching processes
- Doping gas introduction for semiconductor manufacturing
- Process development requiring precise gas composition control
