Digital guide
You are here:
Detailed content
Technical Specifications:
- Material: High-purity aluminum nitride (AlN) ceramic
- Wattage: 1.2 kW maximum heating capacity
- Temperature Range: 50°C to 400°C
- Temperature Control: Dual-zone independent control
- Uniformity: ±1.0°C across 200mm wafer
- Surface Finish: Ground to Ra ≤ 0.4 μm
- Power Input: 208V AC, 3-phase
Functional Features:
- High thermal conductivity for rapid, uniform heating
- Excellent chemical resistance to process environments
- Low particulate generation for cleanroom compatibility
- Precision temperature sensing for closed-loop control
- High dielectric strength for RF isolation
- Long service life with minimal maintenance requirements
Application: Used for wafer heating in Endura PVD, pre-clean, and degas process chambers.
