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Technical Specifications:
- Type: Bipolar electrostatic chuck
- Heating: Dual-zone resistive heating
- Temperature Range: 50°C to 450°C
- Uniformity: ± 1°C across wafer
- Material: Aluminum Nitride (AlN)
Functional Features:
- Strong, uniform electrostatic clamping force
- Rapid heating and cooling cycles
- RF bias capability for plasma processes
- Low outgassing for UHV compatibility
Application: Core wafer stage in high-temperature PVD and Etch chambers (Endura platforms).
